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| inchange semiconductor isc product specification isc silicon npn power transistor 2sC4007 description low collector saturation voltage : v ce(sat) = 1.0v(max)@ i c = 2a collector-emitter breakdown voltage- : v (br)ceo = 80v (min) wide area of safe operation complement to type 2sa1634 applications designed for audio and general purpose applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 6 v i c collector current-continuous 4 a i cm collector current-peak 6 a collector power dissipation @ t c =25 40 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistor 2sC4007 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 100 v v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 6 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.2a b 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 a h fe dc current gain i c = 1a ; v ce = 4v 100 500 f t current-gain?bandwidth product i e = -0.2a ; v ce = 12v 10 mhz c ob output capacitance i e =0 ; v cb = 10v; f test = 1mhz 60 pf ? h fe classifications e f g 100-200 160-320 250-500 isc website www.iscsemi.cn 2 www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/ |
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